器件名称:
FDN5630
功能描述:
60V N-Channel PowerTrench MOSFET
文件大小:
254.3KB 共8页
简 介:
FDN5630 March 2000 FDN5630 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(ON) in a small SOT23 footprint. Fairchild’s PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON) specifications. The result is higher overall efficiency with less board space. Features 1.7 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V RDS(ON) = 0.120 @ VGS = 6 V. Optimized for use in high frequency DC/DC converters. Low gate charge. Very fast switching. SuperSOTTM - 3 provides low RDS(ON) in SOT23 footprint. Applications DC/DC converter Motor drives D D S SuperSOT -3 TM G TA = 25 C unless otherwise noted G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 60 ±20 (Note 1a) Units V V A W °C 1.7 10 0.5 0.46 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 °C/W °C/W Package Marking and Ordering Information Device Marking 5630 Device FDN5630 Reel Size 7 Tape Width 8mm Quantity 3000 units 2000 Fairchild Semiconductor Corporati……
