器件名称:
FDN5630
功能描述:
N-Channel PowerTrench MOSFET
文件大小:
107.4KB 共2页
简 介:
SMD Type N-Channel PowerTrench MOSFET FDN5630 MOSFET ■ Features ● VDS (V) = 60V ● RDS(ON)＜100 mΩ (VGS = 10V) +0.1 2.4-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 ● Low gate charge ● Very fast switching 0.55 ● Optimized for use in high frequency DC/DC converters +0.1 1.3-0.1 ● RDS(ON)＜120 mΩ (VGS = 6V) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate +0.1 0.38-0.1 0-0.1 2.Emitter 2. Source 3. Drain 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-to-source voltage Drain curent -Continuous -Pulsed Power dissipation Maximum Junction-to-Ambient Junction and storage temperature range PD RθJA TJ,TSTG Symbol VDS VGS ID Rating 60 ±20 1.7 10 0.5 250 -55 to +150 W ℃/ W ℃ Unit V V A www.kexin.com.cn 1 SMD Type N-Channel PowerTrench MOSFET FDN5630 ■ Electrical Characteristics Ta = 25℃ Parameter Drain-source Breakdown voltage Breakdown Voltage Temperature Coefficient Symbol V(BR)DSS △V(BR)DSS/△TJ MOSFET Testconditons ID= 250 μA, VGS = 0V ID = 250μA, Referenced to 25℃ ID= 1.7A, VGS = 10V Min 60 Typ Max Unit V 63 73 127 83 1 2.4 6 1 -100 100 7 10 100 180 120 3 mV/℃ Static drain-source on- resistance RDS(on) ID= 1.7A, VGS = 10V Ta = 125℃ ID= 1.6A, VGS = 6V mΩ Gate threshold voltage Forward Transconductance Gate-source leakage current Gate-source forward leadage Gate-source reverse leadage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on delay time Rise time Turn-off delay t……
