器件名称:
FDS4435
功能描述:
P-Channel Logic Level PowerTrenchTM MOSFET
文件大小:
637.39KB 共8页
简 介:
FDS4435 June 1999 FDS4435 P-Channel Logic Level PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features -8.8 A, -30 V. RDS(ON) = 0.020 @ VGS = -10 V RDS(ON) = 0.035 @ VGS = -4.5 V Low gate charge (17nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications DC/DC converter Load switch Motor drives ' ' ' ' 62 6 6 6 * $EVROXWH 0D[LPXP 5DWLQJV 6\PERO W'66 W*66 D' 9hvTprWyhtr BhrTprWyhtr 9hv8r 8v Qyrq Q' U 2!$8yrurvrrq $ 3DUDPHWHU 5DWLQJV " 8QLWV W W 6 ±! Ir h '' $ Qr9vvhvsTvtyrPrhv Ir h Ir i Ir p !$ ! X U-U VWJ PrhvthqThtrEpvUrrhrShtr $$ $ °8 7KHUPDO &KDUDFWHULVWLFV S S θ-$ θ-& UurhySrvhprEpv6ivr UurhySrvhprEpv8hr Ir h $ !$ °8X °8X Ir 3DFNDJH 0DUNLQJ DQG 2UGHULQJ ,QIRUPDWLRQ 'HYLFH 0DUNLQJ A9T##"$ 'HYLFH 5HHO 6L]H " 7DSH :LGWK ! 4XDQWLW\ !$v A9T##"$ 1999 Fairchild Semiconductor Corporation FDS4435 Rev. D FDS4435 (OHFWULFDO &KDUDFWHULVWLFV 6\PERO 7W'66 U 2!$8yrurvrrq $ 3DUDPHWHU 9hvTpr7rhxqWyhtr 7rhxqWyhtrUrrhr 8rssvpvr arBhrWyhtr9hv8r Bhr7qGrhxhtr8r Ahq 7HVW &RQGLWL……
