器件名称:
FDS4435
功能描述:
30V P-Channel PowerTrench MOSFET
文件大小:
65.65KB 共5页
简 介:
FDS4435 October 2001 FDS4435 30V P-Channel PowerTrench MOSFET General Description This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features –8.8 A, –30 V RDS(ON) = 20 m @ V GS = –10 V RDS(ON) = 35 m @ V GS = –4.5 V Low gate charge (17nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Applications Power management Load switch Battery protection D D SO-8 DD DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25oC unless otherwise noted 8 Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings –30 ±25 (Note 1a) Units V V A W –8.8 –50 2.5 1.2 1 –55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ , TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ JA Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDS4435 2001 Fairchild Semiconductor Corporation Device FDS4435 Reel Size 13’’ Tape width 12mm Quantity 2500 units FDS4435 Rev F1(W) FDS4435 ……
