器件名称:
FDS6575
功能描述:
Single P-Channel, Logic Level, PowerTrenchTM MOSFET
文件大小:
247.14KB 共8页
简 介:
November 1998 FDS6575 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features -10 A, -20 V. RDS(ON) = 0.013 @ VGS = -4.5 V, RDS(ON) = 0.017 @ VGS = -2.5 V. Low gate charge (50nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D 5 4 3 2 1 S FD 75 65 S S S G 6 7 8 SO-8 pin 1 Absolute Maximum Ratings Symbol Parameter TA = 25oC unless otherwise noted FDS6575 Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) (Note 1a) -20 ±8 -10 -50 2.5 1.2 1 -55 to 150 V V A W TJ,TSTG RθJA RθJC Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W FDS6575 Rev.C1 1998 Fairchild Semiconductor Corporation Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter……
