器件名称:
FDS6670AS
功能描述:
30V N-Channel PowerTrench SyncFET
文件大小:
114.57KB 共7页
简 介:
FDS6670AS March 2005 FDS6670AS 30V N-Channel PowerTrench SyncFET General Description The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low and low gate charge. The FDS6670AS RDS(ON) includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Features 13.5 A, 30 V. RDS(ON) max= 9.0 m @ VGS = 10 V RDS(ON) max= 11.5 m @ VGS = 4.5 V Includes SyncFET Schottky body diode Low gate charge (27nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability Applications DC/DC converter Low side notebook D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) Units V V A W 13.5 50 2.5 1.2 1 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6670AS FDS6670AS Device FDS6670AS FDS6670AS_NL (Note 4) Reel Size 13’’ 13’’ Tape width 12mm 12mm Quantity 2500 units ……
