器件名称:
FDS6912
功能描述:
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
文件大小:
219.88KB 共8页
简 介:
FDS6912 January 2000 FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features RDS(ON) = 0.028 @ VGS = 10 V 6 A, 30 V. RDS(ON) = 0.042 @ VGS = 4.5 V. Optimized for use in switching DC/DC converters with PWM controllers Very fast switching. Low gate charge D1 D1 D2 D2 S1 G1 5 6 7 Q1 4 3 2 Q2 SO-8 S2 8 1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 ±20 (Note 1a) Units V V A W 6 20 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.6 1 0.9 -55 to +150 °C TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6912 2000 Fairchild Semiconductor Corporation Device F……
