器件名称:
FDS6982
功能描述:
Dual N-Channel, Notebook Power Supply MOSFET
文件大小:
238.95KB 共12页
简 介:
FDS6982 June 1999 FDS6982 Dual N-Channel, Notebook Power Supply MOSFET General Description This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, PowerTrenchTM MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized for low conduction (less than 20m at VGS = 4.5V). Features Q2: 8.6A, 30V. RDS(on) = 0.015 @ VGS = 10V RDS(on) = 0.020 @ VGS = 4.5V Q1: 6.3A, 30V. RDS(on) = 0.028 @ VGS = 10V RDS(on) = 0.035 @ VGS = 4.5V Fast switching speed. Low gate charge (Q1 typical = 8.5nC). High performance trench technology for extremely low RDS(ON). Applications Battery powered synchronous DC:DC converters. Embedded DC:DC conversion. D2 D2 D1 D1 G2 S2 5 6 7 Q1 4 3 2 Q2 SO-8 G1 S1 8 1 Absolute Maximum Ratings Symbol V DSS V GSS ID PD T A = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) (Note 1a) Q2 30 ±20 8.6 30 2 1.6 1 0.9 -55 to +150 Q1 30 ±20 6.3 20 Units V V A W TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal C……
