器件名称:
EM584161
功能描述:
256K x 16 Low Power SRAM
文件大小:
249.73KB 共13页
简 介:
EtronTech Features Single power supply voltage of 1.65V to 1.95V Power down features using CE1# and CE2 Low power dissipation Data retention supply voltage: 0.9V to 1.95V Direct TTL compatibility for all input and output Wide operating temperature range: -40°C to 85°C Standby current @ VDD = 1.95 V ISB Maximum EM584161BA/BC-70/85 EM584161BA-70E/85E 8 A 80 A D GND DQ11 A17 A7 EM584161 256K x 16 Low Power SRAM Rev 2.0 Pin Configuration 48-Ball BGA (CSP), Top View 1 2 3 4 5 6 11/2003 A LB# OE# A0 A1 A2 CE2 B DQ8 UB# A3 A4 CE1# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 DQ3 VDD E VDD DQ12 NC A16 DQ4 GN D F DQ14 DQ13 A14 A15 DQ5 DQ6 Ordering Information Part Number EM584161BC-70 EM584161BA-70 EM584161BA-70E EM584161BC-85 EM584161BA-85 EM584161BA-85E Speed 70 ns 70 ns 70 ns 85 ns 85 ns 85 ns ISB 8 A 8 A 80 A 8 A 8 A 80 A Package 6x8 BGA 8x10 BGA 8x10 BGA 6x8 BGA 8x10 BGA 8x10 BGA G DQ15 NC A12 A13 WE# DQ7 H NC A8 A9 A10 A11 NC Pin Description Symbol A0 - A17 DQ0 - DQ15 CE1#, CE2 OE# WE# LB#, UB# GND VDD NC Function Address Inputs Data Inputs / Outputs Chip Enable Inputs Output Enable Read / Write Control Input Data Byte Control Inputs Ground Power Supply No Connection Overview The EM584161 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced CMOS technology. This Device operates from a single 1.65V to 1.95V power supply. Advanced circuit technology provides both high speed and low power. It……
