器件名称:
TC2320
功能描述:
N- and P-Channel Enhancement-Mode Dual MOSFET
文件大小:
485.14KB 共4页
简 介:
TC2320 N- and P-Channel Enhancement-Mode Dual MOSFET Features Low threshold Low on resistance Low input capacitance Fast switching speeds Freedom from secondary breakdown Low input and output leakage Independent, electrically isolated N- and Pchannels General Description The Supertex TC2320TG consists of a high voltage, low threshold N- and P-channel MOSFET in an SO-8 package. These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefcient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Medical ultrasound transmitters High voltage pulsers Ampliers Buffers Piezoelectric transducer drivers General purpose line drivers Logic level interface Ordering Information Device Package Options 8-Lead SOIC (Narrow Body) TC2320 TC2320TG-G BVDSS/BVDGS (V) RDS(ON) (max) (Ω) N-Channel 200 P-Channel -200 N-Channel 7.0 P-Channel 12 -G indicates package……
