器件名称:
MJW16010
功能描述:
NPN SILICON POWER TRANSISTORS
文件大小:
548.63KB 共10页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ16010/D MJ16010 Designer's SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are selected high gain versions of the MJ16010 and MJW16010 for applications where drive current is limited. Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits Fast Turn–Off Times — TC = 100°C 50 ns Inductive Fall Time (Typ) 90 ns Inductive Crossover Time (Typ) 800 ns Inductive Storage Time (Typ) 100_C Performance Specified for: Reverse–Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents Data Sheet MJW16010 MJ16012* MJW16012* *Motorola Preferred Device 15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS v w MAXIMUM RATINGS Rating Symbol VCEO VCEV VEB IC ICM IB IBM PD MJ16010 MJ16012 MJW16010 MJW16012 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage 450 850 6.0 15 20 10 15 Collector Current — Continuous — Peak (1) Base Current — Continuous — Peak (1) Total Device Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C Watts 1 75 100 ……
