器件名称:
MJW16010
功能描述:
Silicon NPN Power Transistors
文件大小:
125.12KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-247 package ·High voltage ,high speed APPLICATIONS ·Switching Regulators ·Inverters ·Solenoids ·Relay Drivers ·Motor Controls ·Deflection Circuits PINNING (see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJW16010 Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER 固电 体 导 半 G N A H INC Collector-base voltage E SEM Open base D N O IC CONDITIONS R O T UC VALUE 850 450 6 15 20 10 15 UNIT V V V A A A A W W/℃ ℃ ℃ Open emitter Collector-emitter voltage Emitter-base voltage Open collector Collector current Collector current-peak Base current Base current-peak Total Power Dissipation Derate above 25℃ Junction temperature Storage temperature TC=25℃ 135 1.11 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.93 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICER ICEV IEBO hFE COB PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance CONDITIONS IC=0.1A ;IB=0 IC=5A; IB=0.……
