器件名称:
MJW16018
功能描述:
POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS
文件大小:
366.81KB 共8页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ16018/D Designer's NPN Silicon Power Transistors 1.5 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. Typical Applications: Features: Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits Collector–Emitter Voltage — VCEV = 1500 Vdc Fast Turn–Off Times 80 ns Inductive Fall Time — 100_C (Typ) 110 ns Inductive Crossover Time — 100_C (Typ) 4.5 s Inductive Storage Time — 100_C (Typ) 100_C Performance Specified for: Reverse–Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents Data Sheet MJ16018* MJW16018 * *Motorola Preferred Device POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS v MAXIMUM RATINGS Rating Symbol MJ16018 MJW16018 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage VCEO(sus) VCEV VEB IC ICM IB IBM PD 800 1500 6 Collector Current — Continuous — Peak(1) Base Current — Continuous — Peak(1) Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above TC = 25_C 10 15 8 12 175 100 1 125 50 1 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to ……
