器件名称:
MJW16018
功能描述:
Silicon NPN Power Transistors
文件大小:
154.03KB 共3页
简 介:
Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ·With TO-247 package ·High voltage ,high speed APPLICATIONS Designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. Particularly suited for line–operated switchmode applications. ·Switching Regulators ·Inverters ·Solenoids ·Relay Drivers ·Motor Controls ·Deflection Circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJW16018 · Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ TC=100℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 10 15 8 12 125 50 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEV ICER IEBO hFE COB PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off ……
