器件名称:
MJW21192
功能描述:
POWER TRANSISTORS COMPLEMENTARY SILICON
文件大小:
150.78KB 共8页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJW21192/D Complementary Silicon Plastic Power Transistors Specifically designed for power audio output, or high power drivers in audio amplifiers. DC Current Gain Specified up to 8.0 Amperes at Temperature All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms TO–247AE Package MJW21192 MJW21191 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 150 VOLTS 100 WATTS NPN PNP MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB PD MJW21191 MJW21192 150 150 5.0 8.0 16 2.0 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous — Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 100 0.65 Watts W/_C TJ, Tstg – 65 to + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol RθJC RθJA Max 50 Unit Thermal Resistance, Junction to Case 0.65 _C/W _C/W CASE 340K–01 TO–247AE Thermal Resistance, Junction to Ambient 1000 PNP C, CAPACITANCE (pF) 100 NPN 10 1.0 1.0 10 100 1000 VR, REVERSE VOLTAGE (V) Figure 1. Typical Capacitance @ 25°C Motorola, Inc. 1997 Motorola Bipolar Power Transistor Device Data 1 v v MJW21192 MJW21191 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic O……
