器件名称:
MJW21192
功能描述:
Silicon NPN Power Transistor
文件大小:
233.53KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJW21192 DESCRIPTION DC Current Gain High Area of Safe Operation APPLICATIONS Designed for power audio output, or high power drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 150 UNIT Collector Current-Continuous Collector Current-Pulsed Base Current-Continuous PD Tj Tstg Total Power Dissipation (TC=25℃) Junction Temperature Storage Temperature w w PARAMETER s c s i . w 5 8 16 2 100 150 -65~150 150 n c . i m e V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C VALUE 0.65 UNIT ℃/W ThermalResistance Junction To Case isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on) ICEs IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC=10mA; IB=0 IC=4A ;IB=0.4A B MJW21192 MIN 150 TYP. MAX UNIT V 1.0 2.0 2 10 10 100 V V V μA μA IC=8A ;IB=1.6A B IC=4A ; VCE=2V VCE=250V; IE=0 VEB=5V; IC=0 IC=4A; VCE=2V Current Gain-Bandwidth Product w w s c s i . w IC=8A; VCE=2V IC=1A ;VC……
