器件名称:
MMBTH24
功能描述:
NPN General Purpose Amplifier
文件大小:
52.64KB 共4页
简 介:
MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from process 47. See MPSH11 for characteristics. 3 2 SOT-23 1 Mark: 3A 1. Base 2. Emitter 3. Collector TO-92 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Value 30 40 4.0 50 -55 ~ +150 Units V V V mA °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition IC = 1.0mA, IB = 0 IC = 100A, IE = 0 IE = 10A, IC = 0 VCB = 15V, IE = 0 IC = 8.0mA, VCE = 10V IC = 8.0mA, VCE = 10V, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz 30 400 0.36 MHz pF Min. 30 40 4.0 50 VV nA Typ. Max. Units V Off Characteristics V(BR)CEO Collector-Emitter Sustaining Voltage * V(BR)CBO V(BR)EBO ICBO hFE fT Ccb Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain Current Gain Bandwidth Product Collector-Base Capacitance On Characteristics Small Signal Characteristics * Pulse Test: Pulse Width ≤ 300s, Duty Cycle ≤ 2.0% Thermal Characteristics TA=25°C unless otherwise noted Symbol P……
