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TIP120

器件名称: TIP120
功能描述: COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
文件大小: 53.42KB    共4页
生产厂商: STMICROELECTRONICS
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简  介:TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The TIP120, TIP121 and TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP125, TIP126 and TIP127, respectively. TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 5 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T case ≤ 25 o C o T amb ≤ 25 C Storage Temperature Max. Operating Junction Temperature TIP120 TIP125 60 60 Value TIP121 TIP126 80 80 5 5 8 0.1 65 2 -65 to 150 150 TIP122 TIP127 100 100 V V V A A A W W o o Unit C C * For PNP types voltage and current values are negative. March 2000 1/4 TIP120/TIP121/TIP122/TIP125/TIP126/TIP127 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.92 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEO Parameter Collector Cut-off Current (I B = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions for TIP120/125 for TIP121/126 for……
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