器件名称:
TIP120
功能描述:
Darlington Transistors
文件大小:
403.23KB 共6页
简 介:
TIP120, 121, 122, 125, 126, 127 Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications. Collector-Emitter sustaining voltage-VCEO(sus) = 60V (Minimum) - TIP120, TIP125 80V (Minimum) - TIP121, TIP126 100V (Minimum) - TIP122, TIP127. Collector-Emitter saturation voltage-VCE(sat) = 2.0V (Maximum) at IC = 3.0A. Monolithic construction with built-in-base-emitter shunt resistors. Minimum A B C D E F G H Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case) I J K L M O 14.68 9.78 5.01 13.06 3.57 2.42 1.12 0.72 4.22 1.14 2.20 0.33 2.48 3.70 Maximum 15.31 10.42 6.52 14.62 4.07 3.66 1.36 0.96 4.98 1.38 2.97 0.55 2.98 3.90 NPN TIP120 TIP121 TIP122 PNP TIP 125 TIP 126 TIP 127 5.0 Ampere Darlington Complementary Silicon Power Transistors 60 - 100 Volts 65 Watts TO-220 Dimensions : Millimetres Maximum Ratings Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous -Peak Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC ICM IB PD TJ, TSTG TIP120 TIP125 60 TIP121 TIP126 80 5.0 5.0 8.0 120 65 0.52 -65 to +150 A mA W W/°C °C TIP122 TIP127 100 Unit V Thermal Characteristics Characteristic Thermal Resistance Junction to Case Symbol Rθjc Maximum 1.92 Unit °C/W Page 1 30/05/05 V1.0 TIP120, 121, 122, 125, 126, 127 Darlington Transistors FIGURE-1 POWER DERATING Electrical Charac……
