器件名称:
TIP122
功能描述:
NPN EPITAXIAL TRANSISTOR
文件大小:
112.15KB 共3页
简 介:
UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Dissipation (Tc=25℃) Storage Temperature Junction Temperature SYMBOL VCBO VCEO VEBO Ic PC Tstg Tj RATINGS 100 100 5 5 40 -55 ~ +150 150 UNIT V V V A W °C °C ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified ) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Collector-Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain SYMBOL BVCEO ICBO ICEO IEBO VCE(SAT)1 VCE(SAT)2 VBE(ON) hFE TEST CONDITIONS IC=100mA VCB=100V VCE=50V VEB=5V IC=3A, IB=12mA IC=5A, IB=20mA VCE=3V, IC=3A IC=500mA, VCE=3V IC=3A, VCE=3V MIN. 100 TYP. MAX. 200 500 2 2 4 2.5 UNIT V uA uA mA V V V 1000 1000 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R204-016,A UTC TIP122 NPN EPITAXIAL PLANAR TRANSISTOR SAFE OPERATI NG AREA SOA 10 10000 1000 UTC C O L L E C T O RC U R R E N T- m A IC, COLLECTOR CURRENT-(A) 100 1 10 1 0.1 1 10 100 FORWARD VOLTAGE- - - VCE( V) PT=1ms PT=100m s PT=1s 1000 1 VCEO,COLLECTOR TO EMITTER VOLTAGE-(V) PT=1MS PT=10MS 10 100……
