器件名称:
TIP127F
功能描述:
NPN/PNP SILICON POWER DARLINGTON TRANSISTORS
文件大小:
138.01KB 共2页
简 介:
Transys Electronics L I M I T E D NPN/PNP SILICON POWER DARLINGTON TRANSISTORS TIP122F NPN TIP127F PNP TO-220FP B CE Designed for General-Purpose Amplifier and Low-Speed Switching Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter Base Voltage IC Collector Current -Continuous ICM Collector Current (Peak) IB Base Current PD Total Power Dissipation @ Tc=25 deg C Derate Above 25 deg C PD Total Power Dissipation @ Ta=25 deg C Derate Above 25 deg C E Unclamped Inductive Load Energy (1) Tj Junction Temperature Tstg Storage Temperature Range THERMAL RESISTANCE Rth(j-a) From Junction to Ambient Rth(j-c) From Junction to Case (1) IC=1A, L=100mH,P.R.F.=10Hz, VCC=20V, RBE=100 ohms ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO (sus) * IC=100mA, IB=0 Collector Emitter (sus) Voltage ICBO VCB=100V, IE=0 Collector Cut off Current ICEO IB=O, VCE=50V IEBO VEB=5V,IC=0 Emitter Cut off Current VCE(Sat)* IC=3A, IB=12mA Collector Emitter Saturation Voltage IC=5A, IB=20mA VBE(on) * IC=3A, VCE=3V Base Emitter on Voltage hFE* IC=0.5A, VCE=3V DC Current Gain IC=3A, VCE=3V VALUE 100 100 5.0 5.0 8.0 120 65 0.52 2.0 0.016 50 150 -65 to +150 62.5 1.92 UNIT V V V A A mA W W/deg C W W/deg C mj deg C deg C deg C/W deg C/W MIN 100 1.0 1.0 MAX 0.2 0.5 2.0 2.0 4.0 2.5 - UNIT V mA mA mA V V V K K ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPT……
