器件名称:
TIP141
功能描述:
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
文件大小:
217.86KB 共6页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP140/D Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140, TIP145 VCEO(sus) = 80 Vdc (Min) — TIP141, TIP146 VCEO(sus) = 100 Vdc (Min) — TIP142, TIP147 Monolithic Construction with Built–In Base–Emitter Shunt Resistor MAXIMUM RATINGS Rating TIP140 TIP141* TIP142* TIP145 TIP146* TIP147* *Motorola Preferred Device NPN PNP Symbol VCEO VCB VEB IC IB TIP140 TIP145 60 60 TIP141 TIP146 80 80 TIP142 TIP147 100 100 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 5.0 10 15 Collector Current — Continuous Peak (1) Base Current — Continuous Total Device Dissipation @ TC = 25_C 0.5 PD 125 Watts Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 100 VOLTS 125 WATTS _C THERMAL CHARACTERISTICS Characteristic Symbol RθJC RθJA Max 1.0 Unit Thermal Resistance, Junction to Case Thermal Resistance, Case to Ambient _C/W _C/W (1) 5 ms, v 10% Duty Cycle. 35.7 CASE 340D–02 DARLINGTON SCHEMATICS NPN TIP140 TIP141 TIP142 BASE COLLECTOR PNP TIP145 TIP146 TIP147 BASE COLLECTOR ≈ 8.0 k……
