器件名称:
TIP36B
功能描述:
COMPLEMENTARY SILICON POWER TRANSISTORS
文件大小:
157.84KB 共6页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP35A/D Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain — hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz TIP35A TIP35B* TIP35C* TIP36A TIP36B* TIP36C* *Motorola Preferred Device NPN PNP v MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB TIP35A TIP36A 60 V 60 V TIP35B TIP36B 80 V 80 V 5.0 25 40 TIP35C TIP36C 100 V 100 V Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Peak (1) Base Current — Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C 5.0 PD 125 1.0 Watts W/_C Operating and Storage Junction Temperature Range Unclamped Inductive Load TJ, Tstg ESB – 65 to + 150 90 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 100 VOLTS 125 WATTS _C mJ THERMAL CHARACTERISTICS Characteristic Symbol RθJC RθJA Max 1.0 Unit Thermal Resistance, Junction to Case _C/W _C/W CASE 340D–02 TO–218AC Junction–To–Free–Air Thermal Resistance 35.7 (1) Pulse Test: Pulse Width = 10 ms, Duty Cycle 125 PD, POWER DISSIPATION (WATTS) 10%. 100 75 50 25 0 0 25 50 75 125 100 TC, CASE TEMPERATURE (°C) 150 175 Figure 1. Power Derati……
