器件名称:
TIP36B
功能描述:
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS
文件大小:
47.33KB 共4页
简 介:
TIP35C TIP36B/TIP36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS s STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. The complementary PNP type is TIP36C. Also TIP36B is a PNP type. 3 2 1 TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO VEBO IC ICM IB P tot Tstg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T case ≤ 25 C Storage Temperature o Value TIP35C TIP36B 80 80 5 25 50 5 125 -65 to 150 150 TIP36C 100 100 Unit V V V A A A W o o C C Max. Operating Junction Temperature For PNP types voltage and current values are negative. October 1999 1/4 TIP35C / TIP36B / TIP36C THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEO IEBO I CES Parameter Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Collector Cut-off Current (V BE = 0) Test Conditions V CE = 60 V V EB = 5 V V CE = Rated V CEO I C = 30 mA for TIP36B for TIP35C/36C I C = 1.5 A I C = 15 A I C = 15 A I C = 25 A I C = 15 A I C = 25 A IC = 1 A IC = 1 A V CE = 10 V V CE = 10 V V CE = 4 V V CE = 4 V I B = 1.5 A IB = 5 A V CE = 4 V V CE = 4 V f = 1 MHz f = ……
