器件名称:
TIP41A
功能描述:
Plastic-Encapsulated Transistors
文件大小:
58.9KB 共1页
简 介:
Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors TIP41A/41B/41C FEATURES Power dissipation PCM: 2 W (Tamb=25℃) TRANSISTOR (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER Collector current ICM: 6 A Collector-base voltage V(BR)CBO: TIP41A : 60 V TIP41B : 80 V TIP41C : 100 V Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter 41A Collector-base breakdown voltage 41B 41C 41A Collector-emitter breakdown voltage 41B 41C Emitter-base breakdown voltage 41A 41B 41C 41A 41B 41C V(BR)EBO IE= 1mA, IC=0 VCB=60V, IE=0 VCB=80V, IE=0 VCB=100V, IE=0 VCE= 30V, IB= 0 ICEO VCE= 30V, IB= 0 VCE= 60V, IB= 0 IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency VCE(sat) VBE(on fT VCE=4 V, IC= 3A IC=6A, IB=0.6A VCE= 4V, IC=6A VCE=10V , IC=0.5A f =1MHz 3 15 VEB=5V, IC=0 VCE= 4V, IC= 0.3A 30 V(BR)CEO Ic= 30mA, IB=0 V(BR)CBO Ic= 1mA, IE=0 123 TJ, Tstg: -55℃ to +150℃ unless otherwise specified) Test conditions MIN 60 80 100 60 80 100 5 V V V MAX UNIT Symbol Collector cut-off current ICBO 0.4 mA Collector cut-off current 0.7 mA Emitter cut-off current 1 mA 75 1.5 2 V V MHZ ……
