器件名称:
TIP41A
功能描述:
NPN Silicon Power Transistor
文件大小:
161.49KB 共3页
简 介:
TIP41 Series NPN Silicon Power Transistor P b Lead(Pb)-Free COLLECTOR 2 BASE 1 1 2 FEATURES: * Medium Power Linear Switching Applications 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature TIP41 40 40 TIP41A 60 60 5 6 2 150 -55-150 TIP41B 80 80 TIP41C 100 100 Units V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C Symbol Test conditions MIN 40 60 80 100 40 60 80 100 5 MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA, I E=0 V Collector-emitter breakdown voltage V(BR)CEO IC=30mA, I B=0 V Emitter-base breakdown voltage TIP41 TIP41A TIP41B TIP41C TIP41/41A TIP41B/41C V(BR)EBO IE= 1mA, I C=0 VCB=40V, I E=0 VCB=60V, I E=0 VCB=80V, I E=0 VCB=100V, I E =0 VCE=30V, I B=0 VCE=60V, I B=0 VEB=5V, I C=0 VCE=4V, I C=0.3A VCE=4V, I C=3A IC=6A, IB =0.6A VCE=4V, IC =6A VCE=10V, IC =0.5A f = 1MHz V Collector cut-off current ICBO 0.4 mA Collector cut-off current Emitter cut-off current ICEO IEBO hFE(1) 0.7 1 30 15 75 1.5 2 3 mA mA DC current gain hFE(2) VCE (sat) VBE(on) fT Collector-emitter saturation voltage Base-emitter voltage Transition Frequency V V MHz WEITRON http://www.weitron.com.tw 1/3 12-Aug……
