器件名称:
TIP42B
功能描述:
POWER TRANSISTORS COMPLEMENTARY SILICON
文件大小:
222.2KB 共6页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP41A/D Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. Collector–Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc (Min) — TIP41A, TIP42A VCEO(sus) = 80 Vdc (Min) — TIP41B, TIP42B VCEO(sus) = 100 Vdc (Min) — TIP41C, TIP42C High Current Gain — Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO–220 AB Package *MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB TIP41A TIP42A 60 60 TIP41B TIP42B 80 80 TIP41C TIP42C 100 100 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 5.0 6 10 Collector Current — Continuous Peak Base Current 2.0 Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 65 0.52 Watts W/_C Watts W/_C mJ PD 2.0 0.016 62.5 Unclamped Inductive Load Energy (1) Operating and Storage Junction Temperature Range E TJ, Tstg – 65 to + 150 TIP41A TIP41B* TIP41C* PNP TIP42A TIP42B* TIP42C* *Motorola Preferred Device NPN 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 – 80 – 100 VOLTS 65 WATTS CASE 221A–06 TO–220AB _C THERMAL CHARACTERISTICS Characteristic Symbol RθJA Max Unit Thermal Resistance, Junction to Ambient……
