器件名称:
TIP42B
功能描述:
PNP Silicon Epitaxial Power Transistor
文件大小:
778.13KB 共3页
简 介:
TIP42/42A/42B/42C PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 BASE 1 1 2 3 Features: * Medium Power Linear Switching Applications * Complement to TIP41/41A/41B/41C 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC TJ Tstg TIP42 -40 -40 TIP42A -60 -60 -5 -6 2 150 -55to+150 TIP42B -80 -80 TIP42C -100 -100 Units V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage TIP42 TIP42A TIP42B TIP42C Collector-emitter breakdown voltage TIP42 TIP42A TIP42B TIP42C Emitter-base breakdown voltage Collector cut-off current TIP42 TIP42A TIP42B TIP42C Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency * Symbol Test conditions MI N -40 -60 -80 -100 -40 -60 -80 -100 -5 MAX UNIT V(BR)CBO IC= -1mA, IE=0 V V(BR)CEO* IC= -30mA, IB=0 V V(BR)EBO IE= -1mA, IC=0 VCB=-40V, IE=0 VCB=-60V, IE=0 VCB=-80V, IE=0 VCB=-100V, IE=0 VCE= -30V, IB= 0 VCE= -60V, IB= 0 VEB=-5V, IC=0 VCE=-4V, IC=-0.3A VCE=-4 V, IC= -3A IC=-6A, IB=-0.6A VCE=-4V, IC=-6A VCE=-10V,IC=-0.5 V ICBO -0.4 mA TIP42/42A TIP42B/42C ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE fT -0.7 -1 30 1……
