器件名称:
SPI07N60S5
功能描述:
Cool MOS
文件大小:
332.37KB 共12页
简 介:
SPP07N60S5, SPB07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance P-TO220-3-1 VDS RDS(on) ID P-TO262 P-TO263-3-2 600 0.6 7.3 V A P-TO220-3-1 2 1 23 Type Package Ordering Code SPP07N60S5 SPB07N60S5 SPI07N60S5 Maximum Ratings Parameter P-TO220-3-1 P-TO263-3-2 P-TO262 Q67040-S4172 Q67040-S4185 Q67040-S4328 Marking 07N60S5 07N60S5 07N60S5 Symbol ID Value Unit Continuous drain current TC = 25 °C TC = 100 °C A 7.3 4.6 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = - A, V DD = 50 V I D puls EAS 14.6 230 0.5 7.3 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 7.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C A V W °C VGS Ptot T j , T stg 83 -55... +150 Operating and storage temperature Rev. 2.1 Page 1 2004-03-30 SPP07N60S5, SPB07N60S5 SPI07N60S5 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 480 V, ID = 7.3 A, Tj = 125 °C dv/dt 20 V/ns Thermal Characteristics Parameter Symbol min. RthJC RthJA RthJA Values typ. max. Unit Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footpri……
