器件名称:
SPI07N60S5
功能描述:
Cool MOS
文件大小:
108.07KB 共10页
简 介:
Final data SPI07N60S5 SPP07N60S5, SPB07N60S5 Cool MOS Power Transistor New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Optimized capacitances Improved noise immunity P-TO262 Product Summary VDS @ Tjmax RDS(on) ID P-TO263-3-2 650 0.6 7.3 V A P-TO220-3-1 Type SPP07N60S5 SPB07N60S5 SPI07N60S5 Package P-TO220-3-1 P-TO263-3-2 P-TO262 Ordering Code Q67040-S4172 Q67040-S4185 Q67040-S4328 Marking 07N60S5 07N60S5 07N60S5 G,1 D,2 S,3 Maximum Ratings, at Tc = 25°C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 7.3 4.6 Unit A Pulsed drain current TC=25°C 1) ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg 1 14.6 230 0.5 7.3 6 ±20 83 -55... +150 A kV/s V W °C mJ Avalanche energy, single pulse ID = 5.5 A, VDD = 50 V Avalanche energy (repetitive, limited by Tjmax ) ID = 7.3 A , VDD = 50 V Avalanche current (repetitive, limited by Tjmax ) Reverse diode dv/dt IS =7.3A, VDS
