器件名称:
1N6101
功能描述:
MONOLITHIC AIR ISOLATED DIODE ARRAY
文件大小:
22.08KB 共1页
简 介:
1N6101 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: HERMETIC CERAMIC PACKAGE Bv > 75V at 5uA Ir < 100nA at 40V C < 4.0 pF 1 16 2 15 3 14 4 13 5 12 6 11 7 10 Absolute Maximum Ratings: Symbol VBR(R) *1 *2 IO *1 * 3 IFSM *1 PT1 *4 PT2 *4 Top Tstg Parameter Reverse Breakdown Voltage Continuous Forward Current Peak Surge Current (tp= 1/120 s) Power Dissipation per Junction @ 25°C Power Dissipation per Package @ 25°C Operating Junction Temperature Range Storage Temperature Range Limit 75 300 500 400 600 -65 to +150 -65 to +200 Unit Vdc mAdc mAdc mW mW °C °C 8 9 .320 .290 .200 .100 .200 MAX .310 .220 .005 MIN .023 .014 .070 .030 .785 MAX .100 BSC .098 MAX NOTE 1: Each Diode NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20% NOTE 3: Derate at 2.4mA/°C above +25 °C NOTE 4: Derate at 4.0mW/°C above +25 °C .060 .015 O-15 .015 .008 Electrical Characteristics (Per Diode) @ 25°C unless otherwise specified Symbol Parameter Conditions PACKAGE OUTLINE Min Max 1 0.1 25 4.0 15 10 5 Unit Vdc uAdc nAdc pF ns ns mV Vf1 Forward Voltage If = 100mAdc *1 IR1 Reverse Current VR = 40 Vdc IR2 Reverse Current VR = 20 Vdc Ct Capacitance (pin to pin) VR = 0Vdc; f = 1 MHz tfr Forward Recovery Time If = 100mAdc trr Reverse Recovery Time If = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms VF5 Forward Voltage Match If = 10 mA NOTE 1: Pulsed: PW = 300us +/-……
