器件名称:
1N6101
功能描述:
DIODE ARRAY CIRCUITS
文件大小:
34.34KB 共3页
简 介:
SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has 8 straight through diodes. These two diode array configurations allow the designer maximum flexibility for circuit design and board layout. Since each diode within the array has individual anode and cathode connections the device may be used in a variety of applications. Also, due to the array's monolithic construction the diode electrical parameters are very closely matched. Both devices are available in ceramic DIP and flatpack and can be processed to Linfinity's S level, JANTXV, JANTX, or JAN equivalent flows. FEATURES 75V minimum breakdown voltage 100mA current capability per diode Switching speeds less than 5ns Low leakage current < 25nA HIGH RELIABILITY FEATURES MIL-S-19500/474 QPL - 1N6100 - 1N6101 - 1N6510 - 1N6511 Equivalent JANS, JANTXV, JANTX, JAN screening available CIRCUIT DIAGRAMS 7 - STRAIGHT THROUGH DIODES SG6100/SG6511 8 - STRAIGHT THROUGH DIODES SG6101/SG6510 6/91 Rev 1.1 2/94 Copyright 1994 1 11861 Western Avenue ∞ Garden Grove, CA 92841 (714) 898-8121 ∞ FAX: (714) 893-2570 LINFINITY Microelectronics Inc. DIODE ARRAY SERIES ABSOLUTE MAXIMUM RATINGS (Note 1 & 2) Breakdown Voltage (VBR) .................................................... 75V Output Current (IO), TC = 25°C Co……
