器件名称:
STPR810D
功能描述:
Ultra Fast Recovery Diodes
文件大小:
74.69KB 共2页
简 介:
STPR810D thru STPR820D Ultra Fast Recovery Diodes Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q A=Anode, C=Cathode, TAB=Cathode STPR810D STPR820D VRRM V 100 200 VRMS V 70 140 VDC V 100 200 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol I(AV) IFSM Characteristics Maximum Average Forward Rectified Current Non Repetitive Peak Forward Surge Current Per Diode Sinusoidal (JEDEC METHOD) Maximum Forward Voltage Pulse Width=300us Duty Cycle Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance @TC=120oC TP=10ms TP=8.3ms Maximum Ratings 8.0 80 90 0.99 1.20 1.25 50 600 80 30 3.0 -55 to +150 Unit A A VF IF=8A @TJ=125oC IF=16A @TJ=125oC IF=16A @TJ=25oC @TJ=25oC @TJ=100oC V IR CJ TRR ROJC uA pF ns o C/W o TJ, TSTG Operating and Storage Temperature Range NOTES: 1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. C FEATURES * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current……
