器件名称:
1SS108
功能描述:
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
文件大小:
17.76KB 共5页
简 介:
1SS108 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-154A (Z) Rev. 1 Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal. Ordering Information Type No. 1SS108 Cathode White 2nd band Black Mark H Package Code DO-35 Outline H 1 2nd band Cathode band 2 1. Cathode 2. Anode 1SS108 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 30 15 125 –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability Symbol IF IR C η — Min 3.0 — — 70 70 Typ — — — — — Max — 100 3.0 — — Unit mA A pF % V Test Condition VF = 1V VR = 10V VR = 1V, f = 1MHz Vin = 2Vrms, f = 40MHz, RL = 5k , CL = 20pF *C = 200pF, Both forward and reverse direction 1 pulse. Note: Failure criterion; I R ≥ 200A at VR = 10V 10 –1 Forward current I F (A) 10 –2 10 –3 10 –4 10 –5 10 –6 0 1.2 1.6 0.4 0.8 Forward voltage VF (V) 2.0 Fig.1 Forward current Vs. Forward voltage 1SS108 10 –2 Reverse current I R (A) 10 –3 10–4 10 –5 10 –6 0 5 10 15 20 25 Reverse voltage VR (V) 30 Fig.2 Reverse current Vs. Reverse voltage f = 1MHz 10 Capacitance C (pF) 1.0 10 –1 10 –1 1.0 Reverse voltage VR (V) 10 Fig.3 Capacitance Vs. Reverse voltage 1SS108 100 80 Rectifier efficiency η (%) 60 40 20 0 0 0.5 1.0 1.5……
