器件名称:
1SS108
功能描述:
SILICON SCHOTTKY BARRIER DIODE
文件大小:
176.81KB 共2页
简 介:
1SS108 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Max. 0.5 Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal. Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Forward Current Junction Temperature Storage Temperature Range Symbol VR IO TJ Tstg Value 30 15 125 - 55 to + 125 Unit V mA O C C O Electrical Characteristics at Ta = 25 OC Parameter Forward Current at VF = 1 V Reverse Current at VR = 10 V Capacitance at VR = 1 V, f = 1 MHz Rectifier Efficiency at Vin = 2 Vrms, f = 40 MHz, RL = 5 K, CL = 20 pF ESD Capability 1) at C = 200 pF, both forward and reverse direction 1 pulse. 1) Symbol IF IR C η - Min. 3 70 70 Max. 100 3 - Unit mA A pF % V Failure criterion: IR ≥ 200 A at VR = 10 V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007 1SS108 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007 ……
