器件名称:
1SS198
功能描述:
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
文件大小:
26.22KB 共5页
简 介:
1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-298A (Z) Rev. 1 Oct. 1998 Features Detection efficiency is very good. Small temperature coefficient. Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS198 Cathode Green Mark 2 Package Code MHD Outline 2 1 Cathode band 2 1. Cathode 2. Anode 1SS198 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 30 125 –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability Notes: 1. *1 Symbol IF IR C η — Min 4.5 — — 70 100 Typ — — — — — Max — 70 1.5 — — Unit mA A pF % V Test Condition VF = 1V VR = 6V VR = 1V, f = 1MHz Vin = 2Vrms, f = 40MHz, RL = 5k, CL = 20pF C = 200pF, Both forward and reverse direction 1 pulse. Failure Criterion ; IR ≥ 140A at V R = 6V 2 1SS198 Main Characteristic -1 -2 10 10 Forward current I F (A) 10 -3 Reverse current I R (A) 10 -2 10 -3 10 -4 10 -4 10 -5 10 -5 0 0.4 0.8 1.2 1.6 2.0 10 -6 0 2 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage 4 8 6 Reverse voltage V R (V) 10 Fig.2 Reverse current Vs. Reverse voltage 100 f=1MHz Rectifier efficiency η (%) 10 Capacitance C (pF) 80 60 1.0 40 20 10 -1 10-1 0 1.0 Reverse voltage V R (V) 10 0 0.5 1.0 1.5 2.0 ……
