器件名称:
1SS198
功能描述:
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
文件大小:
61.92KB 共5页
简 介:
1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0126-0200Z (Previous: ADE-208-298A) Rev.2.00 Oct.23.2003 Features Detection efficiency is very good. Small temperature coefficient. Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS198 Cathode Green Mark 2 Package Code MHD Pin Arrangement 2 1 Cathode band 2 1. Cathode 2. Anode Rev.2.00, Oct.23.2003, page 1 of 4 1SS198 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 30 125 –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward current Reverse current Capacitance ESD-Capability Note: *1 Symbol IF IR C — Min 4.5 — — 100 Typ — — — — Max — 70 1.5 — Unit mA A pF V Test Condition VF = 1 V VR = 6 V VR = 1 V, f = 1 MHz C = 200 pF, Both forward and reverse direction 1 pulse. 1. Failure criterion; IR ≥ 140 A at VR = 6 V Rev.2.00, Oct.23.2003, page 2 of 4 1SS198 Main Characteristics 10–1 10–2 10–3 Reverse current IR (A) Forward current IF (A) 10–2 10–3 10–4 10–4 10–5 10–5 0 0.4 0.8 1.2 1.6 2.0 10–6 0 2 4 6 8 10 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage f = 1MHz 10 Capacitance C (pF) 1.0 0.1 0.1 1.0 Reverse voltage VR (V) 10 Fig.2 Capacitance vs. Reverse voltage Rev.2.00, Oct.2……