器件名称:
2N1613
功能描述:
SILICON PLANAR EPITAXIAL TRANSISTORS
文件大小:
214.92KB 共3页
简 介:
NPN 2N1613 – 2N1711 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCER VEBO IC ICM PD TJ TStg Ratings Collector-Base Voltage Collector-Emitter Voltage (RBE = 10) Emitter-Base Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature range @ Tcase= 25° @ Tcase= 100° @ Tamb= 25° Value 75 50 7 0.5 1 3 1.7 0.8 200 -65 to +200 Unit V V V A A Watts Watts Watts °C °C THERMAL CHARACTERISTICS Symbol RthJ-c RthJ-amb Ratings Thermal Resistance, Junction-case Thermal Resistance, Junction-ambient Value 58 219 Unit °C/ W °C/ W COMSET SEMICONDUCTORS 1/3 NPN 2N1613 – 2N1711 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO IEB0 VCBO Ratings Collector Cutoff Current Test Condition(s) Min 75 50 7 20 35 40 20 20 20 35 75 100 40 35 30 70 - Typ 35 130 75 65 2.2 4.4 3.6x10-4 7.3x10-4 12.5 23.8 Mx 10 10 10 5 1.5 1.3 120 300 150 Unit nA A nA V V V V V VCE=60 V, IE=0 VCE=60 V, IE=0, Tamb = 150°C 2N1613 VEB=5 V Emitter Cutoff Current 2N1711 VEB=5 V IC=0.1 mA Collector Base Breakdown Voltage IC=10 mA , RBE=10 IE=100 A , IC=0 IC=150 mA , IB=15 mA IC=150 mA , IB=15 m……
