器件名称:
2N1613
功能描述:
NPN LOW POWER SILICON TRANSISTOR
文件大小:
59.99KB 共2页
简 介:
TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/181 Devices 2N718A 2N1613 2N1613L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) Symbol VCEO VCBO VEBO IC Value 30 75 7.0 500 0.5 0.8 1.8 3.0 -55 to +175 Max. Unit Vdc Vdc Vdc mAdc TO-18 (TO-206AA)* 2N718A 2N718A 2N1613, L @ TC = +250C (2) 2N718A 2N1613, L Operating & Storage Junction Temperature Range PT W TJ, Tstg Symbol 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Unit 0 2N718A 97 C/W RθJC 2N1613, L 58 1) Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C 2) Derate linearly 17.2 mW/0C for 2N1613, L and 10.3 mW/0C for 2N718A for TC > +250C TO-39 (TO-205AD)* 2N1613 TO-5* 2N1613L *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO V(BR)CER ICBO IEBO Min. Max. Unit Vdc Vdc 10 10 ηAdc ηAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc, RBE = 10 Collector-Base Cutoff Current VCB= 60 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 30 50 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N718A, 2N1613, 2N1613L JAN, SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Mi……
