器件名称:
1SS355
功能描述:
Silicon Epitaxial Planar Diode
文件大小:
209.18KB 共3页
简 介:
BL Galaxy FEATURES z Electrical Production specification Silicon Epitaxial Planar Diode Small Surface Mounting Type: SOD-323 z z High Speed :t=1.2ns Typ. High Reliability With High Surge Current Handing Capability. 1SS355 Pb Lead-free APPLICATIONS z High speed switching SOD-323 ORDERING INFORMATION Type No. 1SS355 Marking A Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ Parameter Non-Repetitive Peak reverse voltage DC Reverse Voltage Peak forward Current Average Rectified Output Current Surge current (1s) Junction temperature Storage temperature unless otherwise specified Symbol VRM VR IFM IO Isurge Tj TSTG Limits 90 80 225 100 500 125 -55~+125 Unit V V mA mA mA ℃ ℃ Document number: BL/SSSDB001 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode ELECTRICAL CHARACTERISTICS @ Ta=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Reverse Recovery Time Symbol VF IR CT trr Min. Typ. 1SS355 unless otherwise specified Unit V μA pF ns Conditions IF=100mA VR=80V VR=0.5V,f=1MHz IF=10mA,VR=6V,RL=100 Max. 1.2 0.1 3 4 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSDB001 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode PACKAGE OUTLINE Plastic surface mounted package 1SS355 SOD-323 SOD-323 K B C Dim A B Min 1.275 1.675 Max 1.325 1.725 D A C D E H 0.9 Typical 0.25 0.27 0.02 0.35 0.37 0.1 J E H ……
