器件名称:
1SS355
功能描述:
SILICON EPITAXIAL PLANAR SWITCHING DIODES
文件大小:
369.74KB 共4页
简 介:
1SS355 SILICON EPITAXIAL PLANAR SWITCHING DIODES FEATURES Small plastic package suitable for surface mounted design High reliability with high surge current handling capability PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol APPLICATIONS High speed switching Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Current Surge Current (1 s) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM Isurge Tj Tstg Value 90 80 100 225 500 125 - 55 to + 125 Unit V V mA mA mA O C C O Electrical Characteristics (Ta = 25 OC) Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 80 V Capacitance between Terminals at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at VR = 6 V, IF = 10 mA, RL = 100 Symbol VF IR CT trr Max. 1.2 0.1 3 4 Unit V A pF ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/04/2009 1SS355 Forward Characteristics 1 1m 0.1m Ta=125 C Reverse Characteristics 100m Forward Current, A 10m Reverse current, A Ta=125 Ta=75 Ta=25 Ta=-25 C C C C 10 1 Ta=75 C 1m 100n Ta=25 C 100 10n 1n 0 0.4 0.8 1.2 0 40 80 120 Forward Voltage, V Reverse Voltage, V 10 Capacitance between terminals characteristics 10 Reverse Recovery Time Characteristics 3 VR=6V Reverse Recovery Time (ns) Irr=1/10……
