器件名称:
1N4149
功能描述:
HIGH SPEED SWITCHING DIODE
文件大小:
29.97KB 共2页
简 介:
1N4149 PRV : 100 Volts Io : 150 mA FEATURES : * * * * * * Silicon Epitaxial Planar Diode High reliability Low reverse current Low forward voltage drop High speed switching Pb / RoHS Free HIGH SPEED SWITCHING DIODE DO - 35 0.079(2.0 )max. 1.00 (25.4) min. 0.150 (3.8) max. 0.020 (0.52)max. 1.00 (25.4) min. MECHANICAL DATA : * Case : DO-35 Glass Case * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.13 gram (approximately) Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Repetitive Peak Reverse Voltage Maximum Reverse Voltage Maximum Average Forward Current Maximum Surge Forward Current at t < 1s and Tj = 25°C Maximum Power Dissipation , Ta = 25 °C Maximum Forward Voltage at IF = 10 mA Maximum Reverse Current Maximum Reverse Recovery Time from IF = 10mA to IR = 1mA , VR = 6V , RL = 100 Junction Temperature Range Storage Temperature Range at VR = 75V SYMBOL VRRM VR IF(AV) IFSM PD VF IR Trr TJ TSTG VALUE 100 75 150 1) UNIT V V mA mA mW V nA ns °C °C 500 500 1.0 5 4 175 - 65 to + 175 Note : 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35) Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARA……
