器件名称:
1N4149
功能描述:
SILICON EPITAXIAL PLANAR DIODES
文件大小:
119.49KB 共1页
简 介:
1N4149...1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching Max. 0.5 Max. 0.45 Max. 1.9 Min. 27.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand Black Cathode Band XXX ST Max. 3.9 Black Part No. XXX Max. 2.9 Min. 27.5 Min. 27.5 Glass Case DO-35 Dimensions in mm Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings and Characteristics (Ta = 25 OC unless otherwise specified.) Peak Reverse Voltage VRM (V) 1N4149 1N4151 1N4152 1N4154 1N4447 1N4449 1N4450 1N4451 1N4453 1N4454 1) 2) 1) 1) Type Max. Average Rectified Current IO (mA) 150 150 150 150 150 150 150 150 150 150 2) Max. Max. Power Dissipation Junction Temp. at 25 OC Ptot (mW) 500 500 400 500 500 500 400 400 400 400 2) Max. Forward Voltage VF (V) 1 1 0.55 1 1 1 0.54 0.5 0.55 1 at IF (mA) 10 50 0.1 30 20 30 0.5 0.1 0.01 10 Max. Reverse Current IR (nA) 25 50 50 100 25 25 50 50 50 100 at VR (V) 20 50 30 25 20 20 30 30 20 50 Max. Reverse Recovery Time Tj (OC) 200 200 175 200 200 200 175 175 175 175 trr (ns) 4 2 2 2 4 4 4 10 4 Conditions IF = 10 mA, VR = 6 V, RL = 100 , to IR = 1 mA IF = 10 mA, VR = 6 V, RL = 100 , to IR = 1 mA IF = 10 mA, VR = 6 V, RL = 100 , to IR = 1 mA IF = 10 mA, VR = 6V, RL = 100 , to IR = 1 mA IF = 10 mA, VR = 6 V, RL = 100 , to IR = 1 mA IF = 10 mA, VR = 6 V, RL = 100 , to IR = 1 mA IF = IR = 10 mA , to IR = 1 mA IF = IR = 10 mA , to IR = 1 mA IF = IR = 10 mA , to IR = 1 mA 100 75 40 35 100 100 40 40 30 75 1) These diodes are al……
