器件名称:
1SS294
功能描述:
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
文件大小:
145.87KB 共2页
简 介:
1SS294 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features Small surface mounting type Low reverse current Low forward voltage 3 1 2 Marking Code: "XM" SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Power Disspation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM PD Tj Tstg Value 45 40 100 300 150 125 - 55 to + 125 Unit V V mA mA mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 40 V Total Capacitance at VR = 0 V, f = 1 MHz Symbol VF IR CT Max. 0.6 5 25 Unit V A pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 30/01/2007 1SS294 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 30/01/2007 ……
