器件名称:
1SS315
功能描述:
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
文件大小:
172.43KB 共3页
简 介:
1SS315 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications UHF Band Mixer PINNING PIN 1 2 DESCRIPTION Cathode Anode 2 1 ST Top View Marking Code: "ST" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Forward Current Junction Temperature Storage Temperature Range Symbol VRM IF TJ Tstg Value 5 30 125 - 55 to + 125 Unit V mA O C C O Electrical Characteristics at Ta = 25 OC Parameter Forward Current at VF = 0.5 V Reverse Current at VR = 0.5 V Total Capacitance at VR = 0.2 V, f = 1 MHz Symbol IF IR CT Min. 30 Typ. 0.6 Max. 25 Unit mA A pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 1SS315 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 1SS315 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE D A E bp UNIT mm A 1.10 0.80 bp 0.40 0.25 C 0.15 0.00 D 1.80 1.60 E 1.35 1.15 HE 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 ……
