器件名称:
2N3715
功能描述:
isc Silicon NPN Power Transistors
文件大小:
42.07KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N3715/3716 DESCRIPTION DC Current Gain: hFE= 50-150@IC= 1A Wide Area of Safe Operation Low Collector Saturation Voltage: VCE(sat)= 0.8V(Max.)@ IC= 5A Complement to Type 2N3791/3792 APPLICATIONS Designed for medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER 2N3715 VCBO Collector-Base Voltage 2N3716 2N3715 VCEO Collector-Emitter Voltage 2N3716 VEBO IC IB PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature 80 7 10 4 150 200 -65~200 V A A W ℃ ℃ 100 60 V VALUE 80 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.17 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N3715/3716 TYP. MAX UNIT 2N3715 VCEO(SUS) Collector-Emitter Sustaining Voltage 2N3716 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage IC= 5A; IB= 0.5A IC= 5A; IB= 0.5A IC= 3A ; VCE= 2V 2N3715 ICEX Collector Cutoff Current 2N3716 IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product VCE= 80V; VBE(off)= -1.5V VCE= 60V; VBE(off)= -1.5V, TC=150℃ VCE= 100V; VBE(off)= -1.5V VCE= 80V……
