器件名称:
2N3715
功能描述:
10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS
文件大小:
272.9KB 共6页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3715/D Silicon NPN Power Transistors . . . designed for medium–speed switching and amplifier applications. These devices feature: Total Switching Time at 3 A typically 1.15 s Gain Ranges Specified at 1 A and 3 A Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A Excellent Safe Operating Areas Complement to 2N3791–92 2N3715 2N3716 10 AMPERE POWER TRANSISTORS SILICON NPN 60 – 80 VOLTS 150 WATTS NPN CASE 1–07 TO–204AA (TO–3) MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB 2N3715 60 80 2N3716 80 Unit Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Base Current Volts Volts Volts 100 7.0 10 7.0 10 Amps Amps Watts 4.0 4.0 Power Dissipation PD 150 150 Thermal Resistance θJC 1.17 1.17 _C/W _C Operating Junction and Storage Temperature Range 160 140 120 100 80 60 40 20 0 0 25 TJ, Tstg – 65 to + 200 PD, POWER DISSIPATION (WATTS) 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1. Power–Temperature Derating Curve Safe Area Limits are indicated by Figures 12, 13. Both limits are applicable and must be observed. REV 7 3–12 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 2N3715 2N3716 v v ELECTRICAL CHARACTERIS……
