器件名称:
2N5614
功能描述:
Silicon NPN Power Transistors
文件大小:
111.98KB 共3页
简 介:
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5614 VCBO Collector-base voltage 2N5616/5618 2N5620 2N5614 VCEO Collector-emitter voltage 2N5616/5618 2N5620 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 100 120 60 80 100 5 5 50 150 -65~150 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5614 VCEO(SUS) Collector-emitter sustaining voltage 2N5616/5618 2N5620 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5614/5618 hFE DC current gain 2N5616/5620 2N5614/5618 fT Transition frequency 2N5616/5620 2N5614 2N5616 2N5618 2N5620 SYMBOL CONDITIONS MIN 60 TYP. MAX UNIT IC=50mA ;IB=0 80 100 V IC=1A; IB=0.1A IC=2.5A ; VCE=5V VCB=Rated VCBO; IE=……
