器件名称:
2N5614
功能描述:
Silicon NPN Power Transistors
文件大小:
123.52KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL 固 导体 半 电 PARAMETER 2N5614 VCBO Collector-base voltage VCEO INCH ANG 2N5616/5618 2N5620 M E S E Open emitter D N O IC CONDITIONS R O T UC VALUE 80 100 120 60 80 100 UNIT V 2N5614 2N5616/5618 2N5620 Open base Collector-emitter voltage V VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Open collector 5 5 V A W ℃ ℃ TC=25℃ 50 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5614 VCEO(SUS) Collector-emitter sustaining voltage 2N5616/5618 2N5620 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5614 2N5616 2N5618 2N5620 CONDITIONS MIN 60 TYP. MAX UNIT IC=50mA ;IB=0 80 100 V IC=1A; IB=0.1A IC=2.5A ; VCE=5V VCB=Rated VCBO; IE=0 VCE= Rated……
