器件名称: 2N5655
功能描述: Silicon NPN Power Transistors
文件大小: 127.06KB 共3页
简 介:Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION ·With TO-126 package ·High breakdown voltage APPLICATIONS ·For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
2N5655 2N5656 2N5657
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Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER 2N5655 VCBO Collector-base voltage 2N5656 2N5657 2N5655 VCEO Collector-emitter voltage 2N5656 2N5657 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 250 300 350 275 325 375 6 0.5 1.0 0.25 20 150 -65~150 V A A A W ℃ ℃ V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 6.25 UNIT ℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5655 VCEO(SUS) Collector-emitter sustaining voltage 2N5656 2N5657 VCEsat-1 VCEsat-2 VCEsat-3 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Emitter-base on voltage 2N5655 ICEO Collector cut-off current 2N5656 2N5657 2N5655 ICBO Collector cut-off current 2N5656 2N5657 ICEX IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off curr……
